Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation
文献类型：期刊论文
| 作者 | Li Hui1; Zhou Kai1; Pang Jingbiao1; Shao Yundong1; Wang Zhu1; Zhao Youwen2 |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2011-07-07 |
| 卷号 | 26期号:7页码:6 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/26/7/075016 |
| 通讯作者 | Li hui() |
| 英文摘要 | Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence doppler broadening measurements. the grown-in defects in these samples were supposed to be ga vacancy (v-ga)-related defects. more v-ga-related defects were introduced into undoped and lightly te-doped gasb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily te-doped gasb, electron irradiation led to partial recovery of vga. the role of te content in the defect evolution is also discussed. |
| WOS关键词 | UNDOPED GALLIUM ANTIMONIDE ; SELF-DIFFUSION ; NATIVE DEFECTS ; N-TYPE ; CRYSTALS ; CATHODOLUMINESCENCE ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; SPECTROSCOPY ; LUMINESCENCE |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000289554400017 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428416 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li Hui |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Hui,Zhou Kai,Pang Jingbiao,et al. Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation[J]. Semiconductor science and technology,2011,26(7):6. |
| APA | Li Hui,Zhou Kai,Pang Jingbiao,Shao Yundong,Wang Zhu,&Zhao Youwen.(2011).Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation.Semiconductor science and technology,26(7),6. |
| MLA | Li Hui,et al."Defect properties of as-grown and electron-irradiated te-doped gasb studied by positron annihilation".Semiconductor science and technology 26.7(2011):6. |
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来源：半导体研究所
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