Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
文献类型：期刊论文
| 作者 | Wang Wei; Huang Bei-Ju; Dong Zan; Chen Hong-Da |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:1页码:7 |
| 关键词 | Optoelectronic integrated circuit Complementary metal-oxide-semiconductor technology Silicon-based light emitting device Electroluminescence |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/1/018503 |
| 通讯作者 | Wang wei(wangweiww33@semi.ac.cn) |
| 英文摘要 | A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 mu m complementary metal-oxide-semiconductor technology. this device is capable of versatile working modes: it can emit visible to near infra-red (nir) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 v-12 v and emit nir light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 v. an apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. furthermore, when the gate oxide is broken down, nir light is emitted from the polysilicon/oxide/silicon structure. optoelectronic characteristics of the device working in different modes are measured and compared. the mechanisms behind these different emissions are explored. |
| WOS关键词 | AVALANCHE BREAKDOWN ; PHOTON-EMISSION ; CURRENT-DENSITY ; DIODES ; MODEL ; ELECTROLUMINESCENCE ; SUPERLATTICES ; EFFICIENCY ; JUNCTIONS ; LEDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000286676000103 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428434 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Wei |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Wei,Huang Bei-Ju,Dong Zan,et al. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology[J]. Chinese physics b,2011,20(1):7. |
| APA | Wang Wei,Huang Bei-Ju,Dong Zan,&Chen Hong-Da.(2011).Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology.Chinese physics b,20(1),7. |
| MLA | Wang Wei,et al."Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology".Chinese physics b 20.1(2011):7. |
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来源：半导体研究所
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