Thermoelectric properties of zno nanowires: a first principle research
文献类型：期刊论文
| 作者 | Liu, Chaoren; Li, Jingbo |
| 刊名 | Physics letters a
 |
| 出版日期 | 2011-07-18 |
| 卷号 | 375期号:30-31页码:2878-2881 |
| 关键词 | Thermoelectric property Zno nanowire First principle calculation Boltzmann transport equation |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2011.06.024 |
| 通讯作者 | Liu, chaoren(supermanliu5@semi.ac.cn) |
| 英文摘要 | By means of ab-initio electronic structure calculation and one-dimensional boltzmann transport equation solution, we investigate the size dependent thermoelectric (te) properties of n-type zno nanowires (nws) and surface passivation effects. as demonstrated by our calculations, largest figure of merit zt achievable in thin nws is larger than that in wide nws, whereas being restrained by higher demand of n-type doping. moreover, bare nws are superior in te application comparing with the passivated. to compete with conventional te materials, lattice thermal conductivity of zno nws should be at least 2 orders of magnitude lower than bulk value. (c) 2011 elsevier b.v. all rights reserved. |
| WOS关键词 | INITIO MOLECULAR-DYNAMICS ; AUGMENTED-WAVE METHOD ; SILICON NANOWIRES ; DOPED ZNO ; CONDUCTIVITY ; TEMPERATURE ; METALS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000293119600017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428454 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, Chaoren |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Chaoren,Li, Jingbo. Thermoelectric properties of zno nanowires: a first principle research[J]. Physics letters a,2011,375(30-31):2878-2881. |
| APA | Liu, Chaoren,&Li, Jingbo.(2011).Thermoelectric properties of zno nanowires: a first principle research.Physics letters a,375(30-31),2878-2881. |
| MLA | Liu, Chaoren,et al."Thermoelectric properties of zno nanowires: a first principle research".Physics letters a 375.30-31(2011):2878-2881. |
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来源：半导体研究所
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