中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well

文献类型:期刊论文

作者Han, Lifen; Zhu, Yonggang; Zhang, Xinhui; Tan, Pingheng; Ni, Haiqiao; Niu, Zhichuan
刊名Nanoscale research letters
出版日期2011
卷号6页码:5
ISSN号1931-7573
DOI10.1186/1556-276x-6-84
通讯作者Zhang, xinhui(xinhuiz@semi.ac.cn)
英文摘要Temperature and carrier density-dependent spin dynamics for gaas/algaas quantum wells (qws) with different structural symmetries have been studied by using time-resolved kerr rotation technique. the spin relaxation time is measured to be much longer for the symmetrically designed gaas qw comparing with the asymmetrical one, indicating the strong influence of rashba spin-orbit coupling on spin relaxation. d'yakonov-perel' mechanism has been revealed to be the dominant contribution for spin relaxation in gaas/algaas qws. the spin relaxation time exhibits non-monotonic-dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron coulomb scattering. our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin bloch equation approach.
WOS关键词ROOM-TEMPERATURE
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000289104200072
出版者SPRINGER
URI标识http://www.irgrid.ac.cn/handle/1471x/2428455
专题半导体研究所
通讯作者Zhang, Xinhui
作者单位Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Han, Lifen,Zhu, Yonggang,Zhang, Xinhui,et al. Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well[J]. Nanoscale research letters,2011,6:5.
APA Han, Lifen,Zhu, Yonggang,Zhang, Xinhui,Tan, Pingheng,Ni, Haiqiao,&Niu, Zhichuan.(2011).Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well.Nanoscale research letters,6,5.
MLA Han, Lifen,et al."Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well".Nanoscale research letters 6(2011):5.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。