Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well
文献类型:期刊论文
作者 | Han, Lifen; Zhu, Yonggang; Zhang, Xinhui; Tan, Pingheng; Ni, Haiqiao; Niu, Zhichuan |
刊名 | Nanoscale research letters
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出版日期 | 2011 |
卷号 | 6页码:5 |
ISSN号 | 1931-7573 |
DOI | 10.1186/1556-276x-6-84 |
通讯作者 | Zhang, xinhui(xinhuiz@semi.ac.cn) |
英文摘要 | Temperature and carrier density-dependent spin dynamics for gaas/algaas quantum wells (qws) with different structural symmetries have been studied by using time-resolved kerr rotation technique. the spin relaxation time is measured to be much longer for the symmetrically designed gaas qw comparing with the asymmetrical one, indicating the strong influence of rashba spin-orbit coupling on spin relaxation. d'yakonov-perel' mechanism has been revealed to be the dominant contribution for spin relaxation in gaas/algaas qws. the spin relaxation time exhibits non-monotonic-dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron coulomb scattering. our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin bloch equation approach. |
WOS关键词 | ROOM-TEMPERATURE |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000289104200072 |
出版者 | SPRINGER |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428455 |
专题 | 半导体研究所 |
通讯作者 | Zhang, Xinhui |
作者单位 | Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Han, Lifen,Zhu, Yonggang,Zhang, Xinhui,et al. Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well[J]. Nanoscale research letters,2011,6:5. |
APA | Han, Lifen,Zhu, Yonggang,Zhang, Xinhui,Tan, Pingheng,Ni, Haiqiao,&Niu, Zhichuan.(2011).Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well.Nanoscale research letters,6,5. |
MLA | Han, Lifen,et al."Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well".Nanoscale research letters 6(2011):5. |
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来源:半导体研究所
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