Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing
文献类型：期刊论文
| 作者 | Wang, Wei; Su, Shaojian; Zheng, Jun; Zhang, Guangze; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming |
| 刊名 | Applied surface science
 |
| 出版日期 | 2011-02-15 |
| 卷号 | 257期号:9页码:4468-4471 |
| 关键词 | Germanium tin alloys Germanium buffer Surface morphology evolution Mass transport |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2010.12.094 |
| 通讯作者 | Cheng, buwen(cbw@semi.ac.cn) |
| 英文摘要 | Epitaxial ge1-xsnx alloys were grown on si(1 0 0) by mbe with a ge buffer layer. the ge buffer was grown by two step method using geh4 as gas source. the epitaxial layers were characterized by rutherford backscattering spectrometry (rbs), double crystal x-ray diffraction (dcxrd), and atomic force microscopy (afm) measurements. then the ge1-xsnx alloys were annealed at 500 degrees c for times ranging from 0 to 10 min. during the annealing process, the surface morphology evolution, from three-dimensional round mounds to nearly two-dimensional ripples, and finally to flat, was observed. this result can be attributed to mass transport by surface diffusion. (c) 2010 elsevier b. v. all rights reserved. |
| WOS关键词 | SURFACE ; GROWTH ; EVOLUTION ; DECAY |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000286459600108 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428461 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng, Buwen |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Wei,Su, Shaojian,Zheng, Jun,et al. Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing[J]. Applied surface science,2011,257(9):4468-4471. |
| APA | Wang, Wei.,Su, Shaojian.,Zheng, Jun.,Zhang, Guangze.,Xue, Chunlai.,...&Wang, Qiming.(2011).Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing.Applied surface science,257(9),4468-4471. |
| MLA | Wang, Wei,et al."Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing".Applied surface science 257.9(2011):4468-4471. |
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来源：半导体研究所
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