Multiple-port inp/ingaasp square-resonator microlasers
文献类型：期刊论文
| 作者 | Che, Kai-Jun1; Yao, Qi-Feng2; Huang, Yong-Zhen2; Cai, Zhi-Ping1; Yang, Yue-De2; Du, Yun2 |
| 刊名 | Ieee journal of selected topics in quantum electronics
 |
| 出版日期 | 2011-11-01 |
| 卷号 | 17期号:6页码:1656-1661 |
| 关键词 | Finite-differences time-domain (fdtd) Inp/ingaasp Metallically confined Multiple-port Square-resonator microlasers |
| ISSN号 | 1077-260X |
| DOI | 10.1109/jstqe.2011.2110639 |
| 通讯作者 | Che, kai-jun(chekaijun@xmu.edu.cn) |
| 英文摘要 | Multiple-port semiconductor microlasers can be used as the light sources in photonic integrated circuits through on-chip waveguide connection. by directly jointing two and four coupling waveguides at vertices, two-and four-port electrically pumped inp/ingaasp square-resonator microlasers are proposed and fabricated by standard photolithography and inductively coupled plasma etching techniques. the mode characteristics of square resonators with two and four coupling waveguides are investigated by 2-d finite-differences time-domain (fdtd) simulation. the influences of the thickness of insulating layer sio(2) and the width of coupling waveguides on the mode q factors are studied for the square resonators laterally confined by an insulating layer sio(2) and p-electrode layers ti/au. room-temperature continuous-wave operations are achieved for a square microlaser with a side length of 15 mu m and two 1-mu m-wide coupling waveguides at threshold current of 26 ma. in addition, a 20-mu m-side microlaser connected with four 1-mu m-wide bus waveguides is realized at 270 k. at last, the four-port square resonator with the same size as the fabricated lasers is studied by fdtd simulation, which yields the mode q factors at the same magnitude as that measured result of 1.34 x 10(4). |
| WOS关键词 | OUTPUT WAVE-GUIDE ; MODE CHARACTERISTICS ; LASERS ; EMISSION ; LAYER |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000297861000021 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428476 |
| 专题 | 半导体研究所 |
| 通讯作者 | Che, Kai-Jun |
| 作者单位 | 1.Xiamen Univ, Dept Elect Engn, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Che, Kai-Jun,Yao, Qi-Feng,Huang, Yong-Zhen,et al. Multiple-port inp/ingaasp square-resonator microlasers[J]. Ieee journal of selected topics in quantum electronics,2011,17(6):1656-1661. |
| APA | Che, Kai-Jun,Yao, Qi-Feng,Huang, Yong-Zhen,Cai, Zhi-Ping,Yang, Yue-De,&Du, Yun.(2011).Multiple-port inp/ingaasp square-resonator microlasers.Ieee journal of selected topics in quantum electronics,17(6),1656-1661. |
| MLA | Che, Kai-Jun,et al."Multiple-port inp/ingaasp square-resonator microlasers".Ieee journal of selected topics in quantum electronics 17.6(2011):1656-1661. |
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来源：半导体研究所
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