Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)
文献类型：期刊论文
| 作者 | Wei, Meng1; Wang, Xiaoliang1,2; Pan, Xu1; Xiao, Hongling1,2; Wang, CuiMei1,2; Hou, Qifeng1; Wang, Zhanguo2 |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 14期号:2页码:97-100 |
| 关键词 | Gan Mocvd Si(111) Aln |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2011.01.006 |
| 通讯作者 | Wei, meng(mengw@semi.ac.cn) |
| 英文摘要 | We studied the influence of high temperature aln buffer thickness on the property of gan film on si (1 1 1) substrate. samples were grown by metal organic chemical vapor deposition. optical microscopy, atomic force microscopy and x-ray diffraction were employed to characterize the samples. the results demonstrated that thickness of high temperature aln buffer prominently influenced the morphology and the crystal quality of gan epilayer. the optimized thickness of the aln buffer is found to be about 150 nm. under the optimized thickness, the largest crack-free range of gan film is 10 mm x 10 mm and the full width at half maximum of gan (0 0 0 2) rocking curve peak is 621.7 arcsec. using high temperature aln/algan multibuffer combined with aln/gan superlattices interlayer we have obtained 2 mu m crack-free gan epilayer on 2 in si (1 1 1) substrates. (c) 2011 elsevier ltd. all rights reserved. |
| WOS关键词 | VAPOR-PHASE EPITAXY ; LAYERS ; SUBSTRATE ; MOCVD ; STRESS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000292408500003 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428477 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, Meng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Meng,Wang, Xiaoliang,Pan, Xu,et al. Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)[J]. Materials science in semiconductor processing,2011,14(2):97-100. |
| APA | Wei, Meng.,Wang, Xiaoliang.,Pan, Xu.,Xiao, Hongling.,Wang, CuiMei.,...&Wang, Zhanguo.(2011).Effect of aln buffer thickness on gan epilayer grown on si(1 1 1).Materials science in semiconductor processing,14(2),97-100. |
| MLA | Wei, Meng,et al."Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)".Materials science in semiconductor processing 14.2(2011):97-100. |
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来源：半导体研究所
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