Enhancing the curie temperature of ferromagnetic semiconductor (ga,mn)as to 200 k via nanostructure engineering
文献类型：期刊论文
| 作者 | Chen, Lin1; Yang, Xiang1; Yang, Fuhua1; Zhao, Jianhua1; Misuraca, Jennifer2; Xiong, Peng2; von Molnar, Stephan2 |
| 刊名 | Nano letters
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 11期号:7页码:2584-2589 |
| 关键词 | Magnetic semiconductors Magnetic properties of nanostructures Magnetotransport phenomena Molecular-beam epitaxy |
| ISSN号 | 1530-6984 |
| DOI | 10.1021/nl201187m |
| 通讯作者 | Zhao, jianhua(jhzhao@red.semi.ac.cn) |
| 英文摘要 | We demonstrate by magneto-transport measurements that a curie temperature as high as 200 k can be obtained in nanostructures of (ga,mn)as. heavily mn-doped (ga,mn)as films were patterned into nanowires and then subject to low-temperature annealing. resistance and hall effect measurements demonstrated a consistent increase of t-c with decreasing wire width down to about 300 nm. this observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. these results may provide useful information on optimal structures for (ga,mn)as-based nanospintronic devices operational at relatively high temperatures. |
| WOS关键词 | MANIPULATION ; GAAS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000292849400002 |
| 出版者 | AMER CHEMICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428479 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Jianhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA |
| 推荐引用方式 GB/T 7714 | Chen, Lin,Yang, Xiang,Yang, Fuhua,et al. Enhancing the curie temperature of ferromagnetic semiconductor (ga,mn)as to 200 k via nanostructure engineering[J]. Nano letters,2011,11(7):2584-2589. |
| APA | Chen, Lin.,Yang, Xiang.,Yang, Fuhua.,Zhao, Jianhua.,Misuraca, Jennifer.,...&von Molnar, Stephan.(2011).Enhancing the curie temperature of ferromagnetic semiconductor (ga,mn)as to 200 k via nanostructure engineering.Nano letters,11(7),2584-2589. |
| MLA | Chen, Lin,et al."Enhancing the curie temperature of ferromagnetic semiconductor (ga,mn)as to 200 k via nanostructure engineering".Nano letters 11.7(2011):2584-2589. |
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来源：半导体研究所
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