Temperature performance of the edge emitting transistor laser
文献类型：期刊论文
| 作者 | Liang, Song; Zhu, Hongliang; Kong, Duanhua; Niu, Bin; Zhao, Lingjuan; Wang, Wei |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2011-07-04 |
| 卷号 | 99期号:1页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3608384 |
| 通讯作者 | Liang, song(liangsong@semi.ac.cn) |
| 英文摘要 | The characteristic temperature (t(0)) of the edge emitting transistor laser (tl) is studied numerically. for the deep-ridge tl, the common base (cb) mode characteristic temperature (t(0,cb)) is a lot lower than the common emitter (ce) mode characteristic temperature (t(0,ce)), which is comparable to a conventional laser. this is resulted from the increase of the emitter to base current gain with the base current, which amplifies the increase of the cb threshold current with temperature. for the shallow-ridge tl, the t(0,ce) is found to be also rather low and is only slightly higher than the t(0,cb). this can be attributed to the large fraction of electron current in the total base current, which is related to the large thickness of base layer and the insertion of quantum wells in the tl. (c) 2011 american institute of physics. [doi: 10.1063/1.3608384] |
| WOS关键词 | HETEROSTRUCTURE LASER ; BIPOLAR-TRANSISTOR ; OPERATION ; INTEGRATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000292639200074 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428481 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang, Song |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, Song,Zhu, Hongliang,Kong, Duanhua,et al. Temperature performance of the edge emitting transistor laser[J]. Applied physics letters,2011,99(1):3. |
| APA | Liang, Song,Zhu, Hongliang,Kong, Duanhua,Niu, Bin,Zhao, Lingjuan,&Wang, Wei.(2011).Temperature performance of the edge emitting transistor laser.Applied physics letters,99(1),3. |
| MLA | Liang, Song,et al."Temperature performance of the edge emitting transistor laser".Applied physics letters 99.1(2011):3. |
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来源：半导体研究所
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