Mbe of gan with dc-plasma source for nitrogen activation
文献类型：期刊论文
| 作者 | Novikov, SV; Kipshidze, GD; Lebedev, VB; Sharonova, LV; Shik, AY; Tretyakov, VV; Jmerik, VN; Kuznetsov, VM; Gurevich, AM; Zinovev, NN |
| 刊名 | Compound semiconductors 1996
 |
| 出版日期 | 1997 |
| 期号 | 155页码:255-258 |
| ISSN号 | 0951-3248 |
| 通讯作者 | Novikov, sv() |
| 英文摘要 | In this paper we report on the first results of epitaxial growth of gan layers on gaas (100) substrates using a modified mbe system, equipped with a dc-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures. |
| WOS关键词 | NITRIDES ; GROWTH |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:A1997BJ12N00056 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428507 |
| 专题 | 半导体研究所 |
| 通讯作者 | Novikov, SV |
| 作者单位 | 1.UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND 2.CHINESE ACAD SCI, INST SEMICOND, BEIJING 100083, PEOPLES R CHINA |
| 推荐引用方式 GB/T 7714 | Novikov, SV,Kipshidze, GD,Lebedev, VB,et al. Mbe of gan with dc-plasma source for nitrogen activation[J]. Compound semiconductors 1996,1997(155):255-258. |
| APA | Novikov, SV.,Kipshidze, GD.,Lebedev, VB.,Sharonova, LV.,Shik, AY.,...&Ren, GB.(1997).Mbe of gan with dc-plasma source for nitrogen activation.Compound semiconductors 1996(155),255-258. |
| MLA | Novikov, SV,et al."Mbe of gan with dc-plasma source for nitrogen activation".Compound semiconductors 1996 .155(1997):255-258. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。