Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide
文献类型：期刊论文
| 作者 | Lin, LY; Chen, NF; Zhong, XR; He, HJ; Li, CJ |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 1998-11-15 |
| 卷号 | 84期号:10页码:5826-5827 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Lin, ly() |
| 英文摘要 | Experimental results have shown the fact that the deep-level centers in semi-insulating gaas decrease with the improvement in stoichiometry. the electrical resistivity doubles when the concentration of el2 centers decreases to a half. the microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-level centers. (c) 1998 american institute of physics. [s0021-8979(98)04921-4]. |
| WOS关键词 | SEMIINSULATING GAAS ; LEC-GAAS ; DEFECTS ; SEGREGATION ; CARBON ; BORON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000076669100077 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428528 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lin, LY |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, LY,Chen, NF,Zhong, XR,et al. Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide[J]. Journal of applied physics,1998,84(10):5826-5827. |
| APA | Lin, LY,Chen, NF,Zhong, XR,He, HJ,&Li, CJ.(1998).Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide.Journal of applied physics,84(10),5826-5827. |
| MLA | Lin, LY,et al."Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide".Journal of applied physics 84.10(1998):5826-5827. |
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来源：半导体研究所
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