中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser

文献类型:期刊论文

作者Pan, Z; Zhang, Y; Du, Y; Wu, RH
刊名Japanese journal of applied physics part 1-regular papers short notes & review papers
出版日期1998-06-01
卷号37期号:6b页码:3673-3675
ISSN号0021-4922
关键词Vcsel Selective oxidation Stability
通讯作者Pan, z()
英文摘要The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. the optimum conditions for stable oxidation were obtained. two mechanisms of the oxidation process are revealed. one is the flow-controlling process, which is unstable. the other is the temperature-controlling process, which is stable. the stable region decreases for higher reaction temperatures. the simulation results for the stable oxidation region are also given. with optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.
WOS关键词WET OXIDATION ; MICROSTRUCTURE
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者JAPAN J APPLIED PHYSICS
WOS记录号WOS:000074990300011
URI标识http://www.irgrid.ac.cn/handle/1471x/2428542
专题半导体研究所
通讯作者Pan, Z
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Pan, Z,Zhang, Y,Du, Y,et al. Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,1998,37(6b):3673-3675.
APA Pan, Z,Zhang, Y,Du, Y,&Wu, RH.(1998).Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser.Japanese journal of applied physics part 1-regular papers short notes & review papers,37(6b),3673-3675.
MLA Pan, Z,et al."Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser".Japanese journal of applied physics part 1-regular papers short notes & review papers 37.6b(1998):3673-3675.

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来源:半导体研究所

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