Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser
文献类型:期刊论文
作者 | Pan, Z; Zhang, Y; Du, Y; Wu, RH |
刊名 | Japanese journal of applied physics part 1-regular papers short notes & review papers |
出版日期 | 1998-06-01 |
卷号 | 37期号:6b页码:3673-3675 |
ISSN号 | 0021-4922 |
关键词 | Vcsel Selective oxidation Stability |
通讯作者 | Pan, z() |
英文摘要 | The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. the optimum conditions for stable oxidation were obtained. two mechanisms of the oxidation process are revealed. one is the flow-controlling process, which is unstable. the other is the temperature-controlling process, which is stable. the stable region decreases for higher reaction temperatures. the simulation results for the stable oxidation region are also given. with optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. |
WOS关键词 | WET OXIDATION ; MICROSTRUCTURE |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | JAPAN J APPLIED PHYSICS |
WOS记录号 | WOS:000074990300011 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428542 |
专题 | 半导体研究所 |
通讯作者 | Pan, Z |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Pan, Z,Zhang, Y,Du, Y,et al. Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser[J]. Japanese journal of applied physics part 1-regular papers short notes & review papers,1998,37(6b):3673-3675. |
APA | Pan, Z,Zhang, Y,Du, Y,&Wu, RH.(1998).Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser.Japanese journal of applied physics part 1-regular papers short notes & review papers,37(6b),3673-3675. |
MLA | Pan, Z,et al."Stability improvement of selective oxidation during the fabrication of ingaas/gaas vertical cavity surface emitting laser".Japanese journal of applied physics part 1-regular papers short notes & review papers 37.6b(1998):3673-3675. |
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来源:半导体研究所
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