New method for the growth of highly uniform quantum dots
文献类型：期刊论文
| 作者 | Pan, D; Zeng, YP; Kong, MY |
| 刊名 | Microelectronic engineering
 |
| 出版日期 | 1998-08-01 |
| 卷号 | 43-4页码:79-83 |
| 关键词 | Self-formed quantum dot Stranski-krastanow growth mode Superlattice |
| ISSN号 | 0167-9317 |
| 通讯作者 | Pan, d(dongpan@red.senu.ac.cn) |
| 英文摘要 | A new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; INGAAS ; GAAS ; DISLOCATIONS ; MULTILAYERS ; DEFECTS ; STRAIN |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000075867000013 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428544 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan, D |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan, D,Zeng, YP,Kong, MY. New method for the growth of highly uniform quantum dots[J]. Microelectronic engineering,1998,43-4:79-83. |
| APA | Pan, D,Zeng, YP,&Kong, MY.(1998).New method for the growth of highly uniform quantum dots.Microelectronic engineering,43-4,79-83. |
| MLA | Pan, D,et al."New method for the growth of highly uniform quantum dots".Microelectronic engineering 43-4(1998):79-83. |
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来源：半导体研究所
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