Hydrogen-decorated lattice defects in proton implanted gan
文献类型：期刊论文
| 作者 | Weinstein, MG; Song, CY; Stavola, M; Pearton, SJ; Wilson, RG; Shul, RJ; Killeen, KP; Ludowise, MJ |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1998-04-06 |
| 卷号 | 72期号:14页码:1703-1705 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Stavola, m() |
| 英文摘要 | Several vibrational bands were observed near 3100 cm(-1) in gan that had been implanted with hydrogen at room temperature and subsequently annealed, our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that an decorated by hydrogen, the frequencies are close to those predicted recently for v-ga-h-n complexes, leading us to tentatively assign the new lines to v-ga defects decorated with different numbers of h atoms. (c) 1998 american institute of physics. [s0003-6951(98)03614-6]. |
| WOS关键词 | AS-H BONDS ; COMPLEXES ; INP ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000072955400013 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428548 |
| 专题 | 半导体研究所 |
| 通讯作者 | Stavola, M |
| 作者单位 | 1.Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA 2.Univ Florida, Dept Mat Sci, Gainesville, FL 32611 USA 3.Sandia Natl Labs, Albuquerque, NM 87185 USA 4.Hewlett Packard Labs, Palo Alto, CA 94304 USA 5.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Weinstein, MG,Song, CY,Stavola, M,et al. Hydrogen-decorated lattice defects in proton implanted gan[J]. Applied physics letters,1998,72(14):1703-1705. |
| APA | Weinstein, MG.,Song, CY.,Stavola, M.,Pearton, SJ.,Wilson, RG.,...&Ludowise, MJ.(1998).Hydrogen-decorated lattice defects in proton implanted gan.Applied physics letters,72(14),1703-1705. |
| MLA | Weinstein, MG,et al."Hydrogen-decorated lattice defects in proton implanted gan".Applied physics letters 72.14(1998):1703-1705. |
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来源：半导体研究所
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