Structural study of ysi1.7 layers formed by channeled ion beam synthesis
文献类型：期刊论文
| 作者 | Wu, MF; Yao, SD; Vantomme, A; Hogg, S; Pattyn, H; Langouche, G; Yang, QQ; Wang, QM |
| 刊名 | Journal of vacuum science & technology b
 |
| 出版日期 | 1998-07-01 |
| 卷号 | 16期号:4页码:1901-1906 |
| ISSN号 | 1071-1023 |
| 通讯作者 | Wu, mf(wu%ksf%fys@vinip.cc.kuleven.ac.be) |
| 英文摘要 | High quality ysi1.7 layers (chi(min) of y is 3.5%) have been formed by 60 kev y ion implantation in si (111) substrates to a dose of 1.0 x 10(17)/cm(2) at 450 degrees c using channeled ion beam synthesis (cibs). it shows that, compared to the conventional nonchanneled ion beam synthesis, cibs is beneficial in forming ysi1.7 layers with better quality due to the lower defect density created in the implanted layer. rutherford backscattering/channeling and x-ray diffraction have been used to study the structure and the strain of the ysi1.7 layers. the perpendicular and parallel elastic strains of the ysi1.7 epilayer are e(perpendicular to) = -0.67% +/- 0.02% and e(parallel to) = +1.04% +/- 0.08%. the phenomenon that a nearly zero mismatch of the ysi1.7/si (111) system results in a nonpseudomorphic epilayer with a rather large parallel strain relative to the si substrate (epsilon(parallel to) = +1.09%) is explained, and the model is further used to explain the elastic strain of epitaxial ersi1.7 and gdsi1.7 rare-earth silicides. (c) 1998 american vacuum society. |
| WOS关键词 | YTTRIUM-SILICIDE LAYERS ; ERSI1.7 LAYERS ; COSI2 LAYERS ; THIN-FILMS ; IMPLANTATION ; SI ; DIFFRACTION ; STABILITY ; KINETICS ; SI(111) |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000075381400023 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428549 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu, MF |
| 作者单位 | 1.Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China 2.Univ Louvain, Inst Kern Stralingsfys, B-3001 Louvain, Belgium 3.Chinese Acad Sci, Inst Semicond, NIOE Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, MF,Yao, SD,Vantomme, A,et al. Structural study of ysi1.7 layers formed by channeled ion beam synthesis[J]. Journal of vacuum science & technology b,1998,16(4):1901-1906. |
| APA | Wu, MF.,Yao, SD.,Vantomme, A.,Hogg, S.,Pattyn, H.,...&Wang, QM.(1998).Structural study of ysi1.7 layers formed by channeled ion beam synthesis.Journal of vacuum science & technology b,16(4),1901-1906. |
| MLA | Wu, MF,et al."Structural study of ysi1.7 layers formed by channeled ion beam synthesis".Journal of vacuum science & technology b 16.4(1998):1901-1906. |
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来源：半导体研究所
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