Hole trap levels in mg-doped gan grown by metalorganic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Nagai, H; Zhu, QS; Kawaguchi, Y; Hiramatsu, K; Sawaki, N |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1998-10-05 |
| 卷号 | 73期号:14页码:2024-2026 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Nagai, h() |
| 英文摘要 | Hole trap levels in a mg-doped gan grown by metalorganic vapor phase epitaxy (movpe) are studied with deep level transient spectroscopy (dlts). the mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3 x 10(17) cm(-3) at room temperature. the dlts spectrum has a dominant peak d-1 with activation energy of 0.41+/-0.05 ev, accompanied by two additional peaks with activation energies of 0.49+/-0.09 ev (d-2) and 0.59+/-0.05 ev (d-3). it was found that the dominant peak d-1 consists of five peaks, each of which has different activation energy and capture cross section. a relevant model for these levels is presented in relation to the mg-n-h complexes. (c) 1998 american institute of physics. [s0003-6951(98)04340-x]. |
| WOS关键词 | P-TYPE GAN ; DEEP LEVELS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000076183300034 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428569 |
| 专题 | 半导体研究所 |
| 通讯作者 | Nagai, H |
| 作者单位 | 1.Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan 2.Chinese Acad Sci, Inst Semicond, Beijing 100083912, Peoples R China |
| 推荐引用方式 GB/T 7714 | Nagai, H,Zhu, QS,Kawaguchi, Y,et al. Hole trap levels in mg-doped gan grown by metalorganic vapor phase epitaxy[J]. Applied physics letters,1998,73(14):2024-2026. |
| APA | Nagai, H,Zhu, QS,Kawaguchi, Y,Hiramatsu, K,&Sawaki, N.(1998).Hole trap levels in mg-doped gan grown by metalorganic vapor phase epitaxy.Applied physics letters,73(14),2024-2026. |
| MLA | Nagai, H,et al."Hole trap levels in mg-doped gan grown by metalorganic vapor phase epitaxy".Applied physics letters 73.14(1998):2024-2026. |
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来源：半导体研究所
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