Pressure behaviour of photoluminescence from inas submonolayer in gaas matrix
文献类型：期刊论文
| 作者 | Li, GH; Han, HX; Ding, K; Wang, ZP |
| 刊名 | Journal of physics-condensed matter
 |
| 出版日期 | 1998-12-07 |
| 卷号 | 10期号:48页码:11111-11120 |
| ISSN号 | 0953-8984 |
| 通讯作者 | Li, gh() |
| 英文摘要 | We have investigated the dependence on hydrostatic pressure of the photoluminescence of an inas submonolayer embedded in a gaas matrix at 15 k and for pressure up to 8 gpa. strong inas-related emissions are observed in all three samples at ambient pressure. the temperature dependence of the emission intensity for these peaks can be well characterized by the thermal activation of excitons from the inas layer to the gaas matrix. with increasing pressure, the inas-related peaks shift to. higher energies. the pressure coefficients of these peaks are very close to that of the free exciton in bulk gaas. some weak peaks observed at pressures above 4.2 gpa are attributed to indirect transitions involving x states in the inas layer. these results are similar to the pressure behaviour observed in the inas/gaas monolayer structures. a group of new lines has been observed in the spectra when pressure is increased beyond 2.5 gpa, which is attributed to the n isoelectronic traps in the gaas matrix. |
| WOS关键词 | QUANTUM-WELLS ; EMISSION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000077677000030 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428590 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, GH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, GH,Han, HX,Ding, K,et al. Pressure behaviour of photoluminescence from inas submonolayer in gaas matrix[J]. Journal of physics-condensed matter,1998,10(48):11111-11120. |
| APA | Li, GH,Han, HX,Ding, K,&Wang, ZP.(1998).Pressure behaviour of photoluminescence from inas submonolayer in gaas matrix.Journal of physics-condensed matter,10(48),11111-11120. |
| MLA | Li, GH,et al."Pressure behaviour of photoluminescence from inas submonolayer in gaas matrix".Journal of physics-condensed matter 10.48(1998):11111-11120. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。