Improvement of the photoluminescence from gallium nitride layers grown by mbe with an additional incident indium flux
文献类型：期刊论文
| 作者 | Foxon, CT; Hooper, SE; Cheng, TS; Orton, JW; Ren, GB; Ber, BY; Merkulov, AV; Novikov, SV; Tret'yakov, VV |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 1998-12-01 |
| 卷号 | 13期号:12页码:1469-1471 |
| ISSN号 | 0268-1242 |
| 通讯作者 | Cheng, ts() |
| 英文摘要 | The effect of using an indium flux during the mbe growth of gan layers was investigated. the properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. the optical properties of the gan layers are shown to improve as compared with undoped gan layers grown under nominally the same conditions but without an additional indium flux. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAAS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000077369000022 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428592 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng, TS |
| 作者单位 | 1.Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England 2.Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England 3.Chinese Acad Sci, Inst Semicond, Semicond Mat Sci Lab, Beijing 100083, Peoples R China 4.AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia |
| 推荐引用方式 GB/T 7714 | Foxon, CT,Hooper, SE,Cheng, TS,et al. Improvement of the photoluminescence from gallium nitride layers grown by mbe with an additional incident indium flux[J]. Semiconductor science and technology,1998,13(12):1469-1471. |
| APA | Foxon, CT.,Hooper, SE.,Cheng, TS.,Orton, JW.,Ren, GB.,...&Tret'yakov, VV.(1998).Improvement of the photoluminescence from gallium nitride layers grown by mbe with an additional incident indium flux.Semiconductor science and technology,13(12),1469-1471. |
| MLA | Foxon, CT,et al."Improvement of the photoluminescence from gallium nitride layers grown by mbe with an additional incident indium flux".Semiconductor science and technology 13.12(1998):1469-1471. |
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来源：半导体研究所
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