Fabrication of gan epitaxial films on al2o3/si (001) substrates
文献类型：期刊论文
| 作者 | Wang, LS; Liu, XG; Zan, YD; Wang, D; Wang, J; Lu, DC; Wang, ZG |
| 刊名 | Science in china series e-technological sciences
 |
| 出版日期 | 1998-04-01 |
| 卷号 | 41期号:2页码:203-207 |
| 关键词 | Fabrication of gan epitaxial films Al2o3/si(001) substrate Metalorganic chemical deposition Crystal structure and surface morphology Photoluminescence spectrum |
| ISSN号 | 1006-9321 |
| 通讯作者 | Wang, ls() |
| 英文摘要 | Single crystal gan films of hexagonal modification have been fabricated on al2o3/si (001) substrates via a low pressure metalorganic chemical deposition (lp-mocvd) method. the full width at half-maximum of (0002) x-ray diffraction peak for the gan film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the x-ray diffraction peak. al room temperature, the photoluminescence (pl) spectrum of gan exhibited near band edge emission peaking at 365 nm. |
| WOS关键词 | BUFFER LAYER ; GROWTH ; DIODES |
| WOS研究方向 | Engineering ; Materials Science |
| WOS类目 | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000073104900012 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428594 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, LS |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, LS,Liu, XG,Zan, YD,et al. Fabrication of gan epitaxial films on al2o3/si (001) substrates[J]. Science in china series e-technological sciences,1998,41(2):203-207. |
| APA | Wang, LS.,Liu, XG.,Zan, YD.,Wang, D.,Wang, J.,...&Wang, ZG.(1998).Fabrication of gan epitaxial films on al2o3/si (001) substrates.Science in china series e-technological sciences,41(2),203-207. |
| MLA | Wang, LS,et al."Fabrication of gan epitaxial films on al2o3/si (001) substrates".Science in china series e-technological sciences 41.2(1998):203-207. |
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来源：半导体研究所
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