The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy
文献类型:期刊论文
作者 | Zhang, JP; Sun, DZ; Li, XB; Wang, XL; Fu, RH; Kong, MY |
刊名 | Journal of crystal growth
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出版日期 | 1998-08-01 |
卷号 | 192期号:1-2页码:93-96 |
关键词 | Gan 2deg Md heterostructure Mbe Photoluminescence |
ISSN号 | 0022-0248 |
通讯作者 | Zhang, jp() |
英文摘要 | Using nh3 cracked on the growing surface as the nitrogen precursor, an algan/gan modulation-doped (md) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (mbe) system. though the al composition is as low as 0.036, as deduced from photoluminescence (pl) measurements, the algan barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2deg) at the heterointerface. the 2deg characteristics are verified by the variable temperature hall measurements down to 7 k. using a parallel conduction model, we estimate the actual mobility of the 2deg to be 1100 cm(2)/v s as the sheet carrier density to be 1.0 x 10(12) cm(-2). our results show that the algan/gan system is very suitable for the fabrication of high electron mobility transistors (hemts). (c) 1998 elsevier science b.v. all rights reserved. |
WOS关键词 | GALLIUM NITRIDE ; GAN ; LUMINESCENCE ; PLASMA |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000075688900014 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428597 |
专题 | 半导体研究所 |
通讯作者 | Zhang, JP |
作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, JP,Sun, DZ,Li, XB,et al. The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy[J]. Journal of crystal growth,1998,192(1-2):93-96. |
APA | Zhang, JP,Sun, DZ,Li, XB,Wang, XL,Fu, RH,&Kong, MY.(1998).The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy.Journal of crystal growth,192(1-2),93-96. |
MLA | Zhang, JP,et al."The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy".Journal of crystal growth 192.1-2(1998):93-96. |
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来源:半导体研究所
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