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The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy

文献类型:期刊论文

作者Zhang, JP; Sun, DZ; Li, XB; Wang, XL; Fu, RH; Kong, MY
刊名Journal of crystal growth
出版日期1998-08-01
卷号192期号:1-2页码:93-96
关键词Gan 2deg Md heterostructure Mbe Photoluminescence
ISSN号0022-0248
通讯作者Zhang, jp()
英文摘要Using nh3 cracked on the growing surface as the nitrogen precursor, an algan/gan modulation-doped (md) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (mbe) system. though the al composition is as low as 0.036, as deduced from photoluminescence (pl) measurements, the algan barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2deg) at the heterointerface. the 2deg characteristics are verified by the variable temperature hall measurements down to 7 k. using a parallel conduction model, we estimate the actual mobility of the 2deg to be 1100 cm(2)/v s as the sheet carrier density to be 1.0 x 10(12) cm(-2). our results show that the algan/gan system is very suitable for the fabrication of high electron mobility transistors (hemts). (c) 1998 elsevier science b.v. all rights reserved.
WOS关键词GALLIUM NITRIDE ; GAN ; LUMINESCENCE ; PLASMA
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000075688900014
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2428597
专题半导体研究所
通讯作者Zhang, JP
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, JP,Sun, DZ,Li, XB,et al. The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy[J]. Journal of crystal growth,1998,192(1-2):93-96.
APA Zhang, JP,Sun, DZ,Li, XB,Wang, XL,Fu, RH,&Kong, MY.(1998).The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy.Journal of crystal growth,192(1-2),93-96.
MLA Zhang, JP,et al."The growth of an algan/gan modulation-doped heterostructure by nh3 source molecular beam epitaxy".Journal of crystal growth 192.1-2(1998):93-96.

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来源:半导体研究所

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