Photoexcited carrier diffusion dependence of differential reflection dynamics in inasxp1-x/inp (x <= 0.35) strained-multiple-quantum wells
文献类型：期刊论文
| 作者 | Zhao, YG; Qin, YD; Huang, XL; Wang, JJ; Zou, YH; Masut, RA; Beaudoin, M |
| 刊名 | Solid state communications
 |
| 出版日期 | 1998-02-01 |
| 卷号 | 105期号:6页码:393-397 |
| 关键词 | Quantum wells Electronic transport Time-resolved optical spectroscopies |
| ISSN号 | 0038-1098 |
| 通讯作者 | Zhao, yg() |
| 英文摘要 | Using the pump-probe technique, we have observed time-resolved differential reflection in inasxp1-x/inp (x less than or equal to 0.35) strained-multiple-quantum wells (smqws) and also examined the photoluminescence spectra for the samples studied. the experimental results show that barrier height, interface roughness and quantum-well width influence strongly the differential reflection dynamics. from the experimental results, we have demonstrated that photoexcited carrier diffusion in cap layer and barriers along the direction perpendicular to the sample surface plays a dominant role in determining the differential reflection dynamics. (c) 1998 elsevier science ltd. |
| WOS关键词 | VAPOR-PHASE-EPITAXY ; INP ; PHOTOLUMINESCENCE ; TRANSPORT ; INAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000071717800008 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428626 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, YG |
| 作者单位 | 1.Peking Univ, Dept Phys, Beijing 100871, Peoples R China 2.Peking Univ, Mesoscop Phys Lab, Beijing 100871, Peoples R China 3.Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 4.Ecole Polytech Montreal, Grp Rech Phys & Technol Couches Minces, Quebec City, PQ H3C 3A7, Canada 5.Ecole Polytech Montreal, Dept Genie Phys, Quebec City, PQ H3C 3A7, Canada |
| 推荐引用方式 GB/T 7714 | Zhao, YG,Qin, YD,Huang, XL,et al. Photoexcited carrier diffusion dependence of differential reflection dynamics in inasxp1-x/inp (x <= 0.35) strained-multiple-quantum wells[J]. Solid state communications,1998,105(6):393-397. |
| APA | Zhao, YG.,Qin, YD.,Huang, XL.,Wang, JJ.,Zou, YH.,...&Beaudoin, M.(1998).Photoexcited carrier diffusion dependence of differential reflection dynamics in inasxp1-x/inp (x <= 0.35) strained-multiple-quantum wells.Solid state communications,105(6),393-397. |
| MLA | Zhao, YG,et al."Photoexcited carrier diffusion dependence of differential reflection dynamics in inasxp1-x/inp (x <= 0.35) strained-multiple-quantum wells".Solid state communications 105.6(1998):393-397. |
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来源：半导体研究所
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