Threshold reduction in strained-layer ingaas/gaas quantum well lasers by liquid phase epitaxy regrowth
文献类型：期刊论文
| 作者 | Lu, LW; Zhang, YH; Yang, GW; Wang, J; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1998-11-01 |
| 卷号 | 194期号:1页码:25-30 |
| 关键词 | Ingaas/gaas quantum wells Dlts measurements Nonradiative centers |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, lw() |
| 英文摘要 | When liquid phase epitaxy regrowth at 780 degrees c for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained ingaas/gaas quantum well lasers by a factor of 3 to 4 is obtained. we suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (c) 1998 elsevier science b.v. all rights reserved. |
| WOS关键词 | THICKNESS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000076899600004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428627 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, LW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Integrated Optoelect Lab, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong |
| 推荐引用方式 GB/T 7714 | Lu, LW,Zhang, YH,Yang, GW,et al. Threshold reduction in strained-layer ingaas/gaas quantum well lasers by liquid phase epitaxy regrowth[J]. Journal of crystal growth,1998,194(1):25-30. |
| APA | Lu, LW,Zhang, YH,Yang, GW,Wang, J,&Ge, WK.(1998).Threshold reduction in strained-layer ingaas/gaas quantum well lasers by liquid phase epitaxy regrowth.Journal of crystal growth,194(1),25-30. |
| MLA | Lu, LW,et al."Threshold reduction in strained-layer ingaas/gaas quantum well lasers by liquid phase epitaxy regrowth".Journal of crystal growth 194.1(1998):25-30. |
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来源：半导体研究所
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