Interference effects in differential reflectance spectra of the gaas epilayers grown on si substrate
文献类型：期刊论文
| 作者 | Zhao, MS; Dai, ZX; Li, GH; Wang, RZ; Jiang, DS |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 1998-12-01 |
| 卷号 | 84期号:11页码:6466-6468 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Zhao, ms(mszhao@ji-public.sd.cninfo.net) |
| 英文摘要 | We report the observation of oscillating features in differential reflectance spectra from the gaas epilayer grown on si substrate in the energy range both below and above the fundamental band gap. it is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. the interference arises from two light beams reflected from different interfaces of the sample. the calculated spectra in the nonabsorption region are in good agreement with measured data. it is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures. (c) 1998 american institute of physics. [s0021-8979(98)08723-4]. |
| WOS关键词 | SEMICONDUCTORS ; SPECTROSCOPY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000076930100098 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428628 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, MS |
| 作者单位 | 1.Qufu Normal Univ, Laser Res Inst, Shandong 273165, Peoples R China 2.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, MS,Dai, ZX,Li, GH,et al. Interference effects in differential reflectance spectra of the gaas epilayers grown on si substrate[J]. Journal of applied physics,1998,84(11):6466-6468. |
| APA | Zhao, MS,Dai, ZX,Li, GH,Wang, RZ,&Jiang, DS.(1998).Interference effects in differential reflectance spectra of the gaas epilayers grown on si substrate.Journal of applied physics,84(11),6466-6468. |
| MLA | Zhao, MS,et al."Interference effects in differential reflectance spectra of the gaas epilayers grown on si substrate".Journal of applied physics 84.11(1998):6466-6468. |
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来源：半导体研究所
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