High-concentration hydrogen in unintentionally doped gan
文献类型：期刊论文
| 作者 | Zhang, JP; Wang, XL; Sun, DZ; Li, XB; Kong, MY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1998-06-01 |
| 卷号 | 189页码:566-569 |
| 关键词 | Gallium nitride Gas source molecular beam epitaxy Hydrogen Autodoping |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, jp(zhangjp@red.semi.ac.cn) |
| 英文摘要 | We use nuclear reaction analysis to study hydrogen in unintentionally doped gan, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of nh: ga complex. the complex is assumed to be one candidate answering for background electrons in unintentionally doped gan. (c) 1998 elsevier science b.v. all rights reserved. |
| WOS关键词 | FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000074730400116 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428642 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JP,Wang, XL,Sun, DZ,et al. High-concentration hydrogen in unintentionally doped gan[J]. Journal of crystal growth,1998,189:566-569. |
| APA | Zhang, JP,Wang, XL,Sun, DZ,Li, XB,&Kong, MY.(1998).High-concentration hydrogen in unintentionally doped gan.Journal of crystal growth,189,566-569. |
| MLA | Zhang, JP,et al."High-concentration hydrogen in unintentionally doped gan".Journal of crystal growth 189(1998):566-569. |
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来源：半导体研究所
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