Size quantization effects in inas self-assembled islands on inp(001) at the onset of 2d-to-3d transition
文献类型：期刊论文
| 作者 | Liu, FQ; Wang, ZG; Wu, J; Xu, B; Zhou, W; Qian, JJ |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-03-01 |
| 卷号 | 197期号:4页码:789-793 |
| 关键词 | Self-assembled island Size quantization effect Molecular beam epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, fq() |
| 英文摘要 | Photoluminescence spectroscopy has been used to investigate self-assembled inas islands in inalas grown on inp(0 0 1) by molecular beam epitaxy, in correlation with transmission electron microscopy. the nominal deposition of 3.6 monolayers of inas at 470 degrees c achieves the onset stage of coherent island formation. in addition to one strong emission around 0.74 ev, the sample displaces several emission peaks at 0.87, 0.92. 0.98, and 1.04 ev. fully developed islands that coexist with semi-finished disk islands account for the multipeak emission. these results provide strong evidence of size quantization effects in inas islands. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | QUANTUM DOTS ; EXCITED-STATES ; GROWTH ; PHOTOLUMINESCENCE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000078877900007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428646 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, FQ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, FQ,Wang, ZG,Wu, J,et al. Size quantization effects in inas self-assembled islands on inp(001) at the onset of 2d-to-3d transition[J]. Journal of crystal growth,1999,197(4):789-793. |
| APA | Liu, FQ,Wang, ZG,Wu, J,Xu, B,Zhou, W,&Qian, JJ.(1999).Size quantization effects in inas self-assembled islands on inp(001) at the onset of 2d-to-3d transition.Journal of crystal growth,197(4),789-793. |
| MLA | Liu, FQ,et al."Size quantization effects in inas self-assembled islands on inp(001) at the onset of 2d-to-3d transition".Journal of crystal growth 197.4(1999):789-793. |
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来源：半导体研究所
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