Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions
文献类型：期刊论文
| 作者 | Ho, WY; Fong, WK; Surya, C; Tong, KY; Lu, LW; Ge, WK |
| 刊名 | Mrs internet journal of nitride semiconductor research
 |
| 出版日期 | 1999 |
| 卷号 | 4页码:5 |
| ISSN号 | 1092-5783 |
| 通讯作者 | Ho, wy() |
| 英文摘要 | We report experiments on hot-electron stressing in commercial iii-v nitride based heterojunction fight-emitting diodes. stressing currents ranging from 100 ma to 200 ma were used. degradations in the device properties were investigated through detailed studies of the i-v characteristics, electroluminescence, deep-level transient fourier spectroscopy and flicker noise. our experimental data demonstrated significant distortions in the i-v characteristics. the room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. concentration of the deep-levels was examined by measuring the deep-level transient fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at e-1 = e-c - 1.1ev. the result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing. |
| WOS关键词 | FLUCTUATIONS ; QUALITY ; DIODES |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000079680200088 |
| 出版者 | MATERIALS RESEARCH SOCIETY |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428654 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ho, WY |
| 作者单位 | 1.Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ho, WY,Fong, WK,Surya, C,et al. Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions[J]. Mrs internet journal of nitride semiconductor research,1999,4:5. |
| APA | Ho, WY,Fong, WK,Surya, C,Tong, KY,Lu, LW,&Ge, WK.(1999).Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions.Mrs internet journal of nitride semiconductor research,4,5. |
| MLA | Ho, WY,et al."Characterization of hot-electron effects on flicker noise in iii-v nitride based heterojunctions".Mrs internet journal of nitride semiconductor research 4(1999):5. |
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来源：半导体研究所
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