中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In composition dependence of lateral ordering in ingaas quantum dots grown on (311)b gaas substrates

文献类型:期刊论文

作者Xu, HZ; Zhou, W; Xu, B; Jiang, WH; Gong, Q; Ding, D; Wang, ZG
刊名Applied surface science
出版日期1999-03-01
卷号141期号:1-2页码:101-106
关键词Quantum dot array In(x)ga(1-x)as self-assembly Molecular beam epitaxy Gaas (311)b High-index Surface structure
ISSN号0169-4332
通讯作者Xu, hz(hzxu@red.semi.ac.cn)
英文摘要Self-assembled in(x)ga(1-x)as quantum dots (qds) on (311)a/b gaas surfaces have been grown by molecular beam epitaxy (mbe). spontaneously ordering alignment of in(x)ga(1-x)as with lower in content around 0.3 have been observed. the direction of alignment orientation of the qds formation differs from the direction of misorientation of the (311)b surface, and is strongly dependent upon the in content x. the ordering alignment become significantly deteriorated as the in content is increased to above 0.5 or as the qds are formed on (100) or (311)a substrates. (c) 1999 elsevier science b.v. all rights reserved.
WOS关键词MOLECULAR-BEAM EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; SELF-ORGANIZATION ; PHASE EPITAXY ; INAS ; SURFACES ; MICROSTRUCTURES ; GAAS(100) ; ALIGNMENT
WOS研究方向Chemistry ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000078979800010
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2428658
专题半导体研究所
通讯作者Xu, HZ
作者单位Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xu, HZ,Zhou, W,Xu, B,et al. In composition dependence of lateral ordering in ingaas quantum dots grown on (311)b gaas substrates[J]. Applied surface science,1999,141(1-2):101-106.
APA Xu, HZ.,Zhou, W.,Xu, B.,Jiang, WH.,Gong, Q.,...&Wang, ZG.(1999).In composition dependence of lateral ordering in ingaas quantum dots grown on (311)b gaas substrates.Applied surface science,141(1-2),101-106.
MLA Xu, HZ,et al."In composition dependence of lateral ordering in ingaas quantum dots grown on (311)b gaas substrates".Applied surface science 141.1-2(1999):101-106.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。