P-type co-doping study of gan by photoluminescence
文献类型：期刊论文
| 作者 | Zhang, JP; Sun, DZ; Wang, XL; Kong, MY; Zeng, YP; Li, JM; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-02-01 |
| 卷号 | 197期号:1-2页码:368-371 |
| 关键词 | P-type co-doping Photoluminescence Acceptor ionization energy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, jp() |
| 英文摘要 | Photoluminescence measurements were performed on p-type co-doping effects of c, as, and mg in gan. the dopants were incorporated into gan by ion implantation performed at 77 k. we find that the 3.42 ev luminescence line is sensitive to hole concentration, and propose that after cartful calibration the 3.42 ev line may be used as a probe to measure hole concentration in gan. simply doping one kind of accepters will not result in holes, while co-doping can substantially improve p-type doping efficiency. as + c and as + mg co-doping induce an acceptor level of 180 mev above the valence band. mg + c co-doping is the most promising method for p-type doping, the related acceptor level is determined to be as shallow as 130 mev. the improvement of the doping efficiency by co-doping is probably due to the decrease of the acceptor ionization energy. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE ; IMPLANTED GAN ; TRANSITIONS ; ENERGY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000078355300050 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428660 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JP,Sun, DZ,Wang, XL,et al. P-type co-doping study of gan by photoluminescence[J]. Journal of crystal growth,1999,197(1-2):368-371. |
| APA | Zhang, JP.,Sun, DZ.,Wang, XL.,Kong, MY.,Zeng, YP.,...&Lin, LY.(1999).P-type co-doping study of gan by photoluminescence.Journal of crystal growth,197(1-2),368-371. |
| MLA | Zhang, JP,et al."P-type co-doping study of gan by photoluminescence".Journal of crystal growth 197.1-2(1999):368-371. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。