Raman scattering in hexagonal gan epitaxial layer grown on mgal(2)o(4) substrate
文献类型：期刊论文
| 作者 | Li, GH; Zhang, W; Han, HX; Wang, ZP; Duan, SK |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 1999-08-15 |
| 卷号 | 86期号:4页码:2051-2054 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Li, gh(ghli@red.semi.ac.cn) |
| 英文摘要 | The room temperature raman spectra of the hexagonal gan epilayer grown on [111]- oriented mgal(2)o(4) substrate were measured in various backscattering and right angle scattering geometries. all of the symmetry-allowed optical phonon modes were observed except the e(2) (low frequency) mode. the quasitransverse and quasilongitudinal modes were also observed in the x(zx)z and x(yy)z configurations, which are the mixed modes of pure transverse and longitudinal modes with a(1) and e(1) symmetry, respectively. (c) 1999 american institute of physics. [s0021-8979(99)01416-4]. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000081720600041 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428663 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, GH |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Integrated Optoelect Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, GH,Zhang, W,Han, HX,et al. Raman scattering in hexagonal gan epitaxial layer grown on mgal(2)o(4) substrate[J]. Journal of applied physics,1999,86(4):2051-2054. |
| APA | Li, GH,Zhang, W,Han, HX,Wang, ZP,&Duan, SK.(1999).Raman scattering in hexagonal gan epitaxial layer grown on mgal(2)o(4) substrate.Journal of applied physics,86(4),2051-2054. |
| MLA | Li, GH,et al."Raman scattering in hexagonal gan epitaxial layer grown on mgal(2)o(4) substrate".Journal of applied physics 86.4(1999):2051-2054. |
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来源：半导体研究所
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