Study on the oxygen concentration reduction in heavily sb-doped silicon
文献类型：期刊论文
| 作者 | Liu, CC; Wang, HM; Li, YX; Wang, QL; Ren, BY; Xu, YS; Que, DL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 196期号:1页码:111-114 |
| 关键词 | Heavily sb-doped silicon Oxygen concentration Thermodynamic calculation Oxygen solubility Lattice strain |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, cc() |
| 英文摘要 | It was determined that oxygen concentration in heavily sb-doped silicon was about 40% lower than that in the lightly doped czochralski grown silicon and decreased with increasing content of sb by means of coincident elastic recoil detection analysis. through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of sio, and sb2o3 evaporation can be neglected. the basic reason for oxygen concentration reduction in heavily sb-doped czsi was that oxygen solubility decreased when element sb with larger radius doped degenerately into silicon crystal. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000077880300016 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428677 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, CC |
| 作者单位 | 1.Zhejiang Univ, Natl Key Lab Silicon Mat, Hangzhou 310027, Peoples R China 2.Hebei Univ Technol, Mat Res Ctr, Tianjin 300130, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, CC,Wang, HM,Li, YX,et al. Study on the oxygen concentration reduction in heavily sb-doped silicon[J]. Journal of crystal growth,1999,196(1):111-114. |
| APA | Liu, CC.,Wang, HM.,Li, YX.,Wang, QL.,Ren, BY.,...&Que, DL.(1999).Study on the oxygen concentration reduction in heavily sb-doped silicon.Journal of crystal growth,196(1),111-114. |
| MLA | Liu, CC,et al."Study on the oxygen concentration reduction in heavily sb-doped silicon".Journal of crystal growth 196.1(1999):111-114. |
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来源：半导体研究所
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