中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Radiative transition in delta-doped gaas superlattices

文献类型:期刊论文

作者Cheng, WC; Xia, JB; Li, GH; Tan, PH; Zheng, HZ
刊名Journal of infrared and millimeter waves
出版日期1999-02-01
卷号18期号:1页码:89-92
关键词Delta-doping Superlattices Radiative transition
ISSN号1001-9014
通讯作者Cheng, wc()
英文摘要Radiative transition in delta-doped gaas superlattices with a weak coupling was investigted at low temperature, the experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. comparing the experiment with theory, a good agreement was abtained.
WOS关键词BAND-GAP ; SI
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000078898700016
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428679
专题半导体研究所
通讯作者Cheng, WC
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cheng, WC,Xia, JB,Li, GH,et al. Radiative transition in delta-doped gaas superlattices[J]. Journal of infrared and millimeter waves,1999,18(1):89-92.
APA Cheng, WC,Xia, JB,Li, GH,Tan, PH,&Zheng, HZ.(1999).Radiative transition in delta-doped gaas superlattices.Journal of infrared and millimeter waves,18(1),89-92.
MLA Cheng, WC,et al."Radiative transition in delta-doped gaas superlattices".Journal of infrared and millimeter waves 18.1(1999):89-92.

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来源:半导体研究所

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