Native-oxidized inalas blocking layer buried heterostructure ingaasp-inp mqw laser for high-temperature operation
文献类型：期刊论文
| 作者 | Jie, WZ; Jin, CS; Fan, Z; Jie, WX; Wei, W; Han, WR |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 1999 |
| 卷号 | 11期号:1页码:3-5 |
| 关键词 | Cvd Insulation Leakage currents Oxidation Quantum-well lasers Semiconductor heterojunctions Thermal factors |
| ISSN号 | 1041-1135 |
| 通讯作者 | Jie, wz() |
| 英文摘要 | A novel idea of inalas native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure ingaasp-inp laser is first proposed and demonstrated. a characteristic temperature (t-0) of 50 k is achieved from an ina1as native oxide buried heterostructure (nobh) ingaasp-inp multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. the threshold current and slope efficiency of nobh laser changes from 5.6 ma, 0.23 mw/ma to 28 ma, 0.11 mw/ma with the operating temperature changing from 20 degrees c to 100 degrees c. it is comparable to conventional p-n reverse biased junction bh laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser. |
| WOS关键词 | LEAKAGE CURRENT ; DIODES |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000077768800001 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428690 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jie, WZ |
| 作者单位 | 1.Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jie, WZ,Jin, CS,Fan, Z,et al. Native-oxidized inalas blocking layer buried heterostructure ingaasp-inp mqw laser for high-temperature operation[J]. Ieee photonics technology letters,1999,11(1):3-5. |
| APA | Jie, WZ,Jin, CS,Fan, Z,Jie, WX,Wei, W,&Han, WR.(1999).Native-oxidized inalas blocking layer buried heterostructure ingaasp-inp mqw laser for high-temperature operation.Ieee photonics technology letters,11(1),3-5. |
| MLA | Jie, WZ,et al."Native-oxidized inalas blocking layer buried heterostructure ingaasp-inp mqw laser for high-temperature operation".Ieee photonics technology letters 11.1(1999):3-5. |
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来源：半导体研究所
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