Scanning electron microscope studies of cubic alxga1-xn films grown on gaas(100) by metal organic vapor phase epitaxy (movpe)
文献类型：期刊论文
| 作者 | Xu, DP; Yang, H; Zhao, DG; Li, JB; Zheng, LX; Wang, YT; Li, SF; Duan, LH; Wu, RH |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-05-01 |
| 卷号 | 203期号:1-2页码:40-44 |
| 关键词 | Algan Cubic Hexagonal Sem Movpe |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xu, dp() |
| 英文摘要 | Cubic algan films were grown on gaas(100) substrates by movpe. scanning electron microscope and photoluminescence were used to analyze the surface morphology and the crystalline quality of the epitaxial layers. we found that both nh, and tega fluxes have a strong effect on the surface morphology of algan films. a model for the lateral growth mechanism is presented to qualitatively explain this effect. the content of hexagonal algan in the cubic algan films was also related to the nh3 flux. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | GAN ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000080367500006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428696 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, DP |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, DP,Yang, H,Zhao, DG,et al. Scanning electron microscope studies of cubic alxga1-xn films grown on gaas(100) by metal organic vapor phase epitaxy (movpe)[J]. Journal of crystal growth,1999,203(1-2):40-44. |
| APA | Xu, DP.,Yang, H.,Zhao, DG.,Li, JB.,Zheng, LX.,...&Wu, RH.(1999).Scanning electron microscope studies of cubic alxga1-xn films grown on gaas(100) by metal organic vapor phase epitaxy (movpe).Journal of crystal growth,203(1-2),40-44. |
| MLA | Xu, DP,et al."Scanning electron microscope studies of cubic alxga1-xn films grown on gaas(100) by metal organic vapor phase epitaxy (movpe)".Journal of crystal growth 203.1-2(1999):40-44. |
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来源：半导体研究所
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