High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere
文献类型：期刊论文
| 作者 | Pajot, B; Clerjaud, B; Xu, ZJ |
| 刊名 | Physical review b
 |
| 出版日期 | 1999-03-15 |
| 卷号 | 59期号:11页码:7500-7506 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Pajot, b() |
| 英文摘要 | High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a h-2 or d-2 atmosphere. the highest-frequency ones are due to the overtones and combination modes of sih fundamentals. others are ch modes due to (c,h) complexes, but the simultaneous presence of nh modes due to (n,h) complexes cannot be excluded. the present results seem to show also the existence of centers including both sih and ch or nh bonds. one sharp mode at 4349 cm-l is related to a weak sih fundamental at 2210 cm(-1). the related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor c atom. [s0163-1829(99)00911-x]. |
| WOS关键词 | ION-IMPLANTED SILICON ; UNIAXIAL-STRESS ; ABSORPTION ; NITROGEN ; DEFECT ; GERMANIUM ; COMPLEXES ; OXYGEN ; LEVEL ; BANDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000079507700046 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428700 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pajot, B |
| 作者单位 | 1.Univ Denis Diderot, UMR 7588, GPS, F-75251 Paris 05, France 2.Univ Paris 06, LOS, UMR 7601, F-75252 Paris 05, France 3.Acad Sinica, Inst Semicond, Beijing 100093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pajot, B,Clerjaud, B,Xu, ZJ. High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere[J]. Physical review b,1999,59(11):7500-7506. |
| APA | Pajot, B,Clerjaud, B,&Xu, ZJ.(1999).High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere.Physical review b,59(11),7500-7506. |
| MLA | Pajot, B,et al."High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere".Physical review b 59.11(1999):7500-7506. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。