Stimulated luminescence and photo-gated hole burning in bafcl0.8br0.2 : sm2+,sm3+ phosphors
文献类型：期刊论文
| 作者 | Chen, W; Su, MZ |
| 刊名 | Journal of physics and chemistry of solids
 |
| 出版日期 | 1999-03-01 |
| 卷号 | 60期号:3页码:371-378 |
| 关键词 | Colour centres Luminescence |
| ISSN号 | 0022-3697 |
| 通讯作者 | Chen, w(wchen@red.semi.as.cn) |
| 英文摘要 | The photo- and thermo-stimulated luminescence (psl and tsl) of bafcl0.8br0.2:sm2+,sm3+ phosphors were investigated. it is found that the stimulated luminescence intensity of sm2+ is almost equal to that of sm3+ even if the content of sm2+ is much lower than that of sm3+. only the stimulated luminescence of sm2+ is observed in the sample in which the content of sm2+ is much higher than sm3+, demonstrating that the psl or tsl efficiency of sm2+ is much higher than that of sm3+. this is attributed to the effective overlap of the e-h emission with the absorption of sm2+ centers which may make the energy transfer from the electron-hole pairs to sm2+ effectively. in bafcl0.8br0.2:sm2+,sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [sm2+ + h] or [sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (sm2+ and sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. the x-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. the net result of the two processes is quite similar and may be comparable. it is suggested from the observations of stimulated luminescence that electron migration between sm2+ and sm3+ is not the major process, color centers may play an important role in hole burning. the information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (c) 1999 elsevier science ltd. all rights reserved. |
| WOS关键词 | PHOTOSTIMULATED LUMINESCENCE ; CENTERS ; BAFBR-EU-2+ ; MECHANISM ; CRYSTALS |
| WOS研究方向 | Chemistry ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000079320000014 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428702 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, W |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Peking Univ, Dept Chem, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, W,Su, MZ. Stimulated luminescence and photo-gated hole burning in bafcl0.8br0.2 : sm2+,sm3+ phosphors[J]. Journal of physics and chemistry of solids,1999,60(3):371-378. |
| APA | Chen, W,&Su, MZ.(1999).Stimulated luminescence and photo-gated hole burning in bafcl0.8br0.2 : sm2+,sm3+ phosphors.Journal of physics and chemistry of solids,60(3),371-378. |
| MLA | Chen, W,et al."Stimulated luminescence and photo-gated hole burning in bafcl0.8br0.2 : sm2+,sm3+ phosphors".Journal of physics and chemistry of solids 60.3(1999):371-378. |
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来源：半导体研究所
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