Self-organization of wire-like inas nanostructures on inp
文献类型：期刊论文
| 作者 | Li, HX; Zhuang, QD; Kong, XW; Wang, ZG; Daniels-Race, T |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-09-01 |
| 卷号 | 205期号:4页码:613-617 |
| 关键词 | Quantum wires Inas/inp Molecular beam epitaxy Self-organization |
| ISSN号 | 0022-0248 |
| 通讯作者 | Li, hx() |
| 英文摘要 | The initial inas growth on inp(1 0 0) during molecular beam epitaxy has been investigated. the as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer inas deposition range. the wires were oriented along the [(1) over bar 1 0] direction. transmission electron microscopy images confirm that the wires are coherently grown on the substrates. our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized inas nanowires. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000082692900021 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428704 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | 1.Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Yantai Teachers Coll, Yantai 264015, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, HX,Zhuang, QD,Kong, XW,et al. Self-organization of wire-like inas nanostructures on inp[J]. Journal of crystal growth,1999,205(4):613-617. |
| APA | Li, HX,Zhuang, QD,Kong, XW,Wang, ZG,&Daniels-Race, T.(1999).Self-organization of wire-like inas nanostructures on inp.Journal of crystal growth,205(4),613-617. |
| MLA | Li, HX,et al."Self-organization of wire-like inas nanostructures on inp".Journal of crystal growth 205.4(1999):613-617. |
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来源：半导体研究所
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