Annealing behavior of hexagonal phase content in cubic gan thin films grown on gaas (001) by mocvd
文献类型：期刊论文
| 作者 | Sun, XL; Yang, H; Wang, YT; Li, GH; Zheng, LX; Li, JB; Xu, DP; Wang, ZG |
| 刊名 | Science in china series a-mathematics physics astronomy
 |
| 出版日期 | 1999-07-01 |
| 卷号 | 42期号:7页码:763-768 |
| 关键词 | Cubic phase Gan hexagonal phase Boundary layer |
| ISSN号 | 1006-9283 |
| 通讯作者 | Sun, xl() |
| 英文摘要 | The annealing behavior of the hexagonal phase content in cubic gan (c-gan) thin films grown on gaas (001) by mocvd is reported. c-gan thin films are grown on gaas (001) substrates by metalorganic chemical vapor deposition (mocvd). high temperature annealing is employed to treat the as-grown c-gan thin films. the characterization of the c-gan films is investigated by photoluminescence (pl) and raman scattering spectroscopy. the change conditions of the hexagonal phase content in the metastable c-gan are reported. there is a boundary layer existing in the c-gan/gaas film. when being annealed at high temperature, the intensity of the tob and lob phonon modes from the boundary layer weakens while that of the e-2 phonon mode from the hexagonal phase increases. the content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period. |
| WOS关键词 | RAMAN-SPECTROSCOPY ; EPITAXY ; PHONONS |
| WOS研究方向 | Mathematics |
| WOS类目 | Mathematics, Applied ; Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000081970600012 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428705 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, XL |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, XL,Yang, H,Wang, YT,et al. Annealing behavior of hexagonal phase content in cubic gan thin films grown on gaas (001) by mocvd[J]. Science in china series a-mathematics physics astronomy,1999,42(7):763-768. |
| APA | Sun, XL.,Yang, H.,Wang, YT.,Li, GH.,Zheng, LX.,...&Wang, ZG.(1999).Annealing behavior of hexagonal phase content in cubic gan thin films grown on gaas (001) by mocvd.Science in china series a-mathematics physics astronomy,42(7),763-768. |
| MLA | Sun, XL,et al."Annealing behavior of hexagonal phase content in cubic gan thin films grown on gaas (001) by mocvd".Science in china series a-mathematics physics astronomy 42.7(1999):763-768. |
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来源：半导体研究所
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