Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes
文献类型：期刊论文
| 作者 | Liu, XF; Liu, JP; Li, JP; Wang, YT; Li, LY; Sun, DZ; Kong, MY; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-05-01 |
| 卷号 | 201页码:551-555 |
| 关键词 | Reverse leakage current Crystalline quality Sige se p-n heterojunction diodes |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, xf() |
| 英文摘要 | Double-crystal x-ray diffraction and i-v characterization have been carried out on the gsmbe grown sige/si p-n heterojunction materials. results show that the sige alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. the crystal perfection and/or the degree of metastability of the sice alloys have been estimated in terms of the model proposed by tsao with the experimental results. high-quality p-n heterojunction diodes can be obtained by optimizing the sige alloy structures, which limit the alloys in the metastable states. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | LAYERS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000080406000118 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428711 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, XF |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, XF,Liu, JP,Li, JP,et al. Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes[J]. Journal of crystal growth,1999,201:551-555. |
| APA | Liu, XF.,Liu, JP.,Li, JP.,Wang, YT.,Li, LY.,...&Lin, LY.(1999).Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes.Journal of crystal growth,201,551-555. |
| MLA | Liu, XF,et al."Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes".Journal of crystal growth 201(1999):551-555. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。