Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum
文献类型：期刊论文
| 作者 | Sun, ZZ; Ding, D; Gong, Q; Zhou, W; Xu, B; Wang, ZG |
| 刊名 | Optical and quantum electronics
 |
| 出版日期 | 1999-12-01 |
| 卷号 | 31期号:12页码:1235-1246 |
| 关键词 | Quantum dot Sld Wide spectrum |
| ISSN号 | 0306-8919 |
| 通讯作者 | Sun, zz() |
| 英文摘要 | We propose a novel superluminescent diode (sld) with a quantum dot (qd) active layer, which should give a wider output spectrum than a conventional quantum well sld. the device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by stranski-krastanow mode. taking a design made out in the inxga1-xas/gaas system for example, the spectrum characteristics of the device are simulated realistically, 100-200 nm full width of half maximum of output spectrum can be obtained. the dependence of the output spectrum on in composition, size distribution and injection current of the dots active region is also elaborated. |
| WOS关键词 | LOW-THRESHOLD ; INAS ISLANDS ; LASERS ; GAAS ; EMISSION ; INGAAS ; LAYER ; OPERATION ; GROWTH |
| WOS研究方向 | Engineering ; Optics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000084398000004 |
| 出版者 | KLUWER ACADEMIC PUBL |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428716 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, ZZ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, ZZ,Ding, D,Gong, Q,et al. Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum[J]. Optical and quantum electronics,1999,31(12):1235-1246. |
| APA | Sun, ZZ,Ding, D,Gong, Q,Zhou, W,Xu, B,&Wang, ZG.(1999).Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum.Optical and quantum electronics,31(12),1235-1246. |
| MLA | Sun, ZZ,et al."Quantum-dot superluminescent diode: a proposal for an ultra-wide output spectrum".Optical and quantum electronics 31.12(1999):1235-1246. |
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来源：半导体研究所
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