High-density inas nanowires realized in situ on (100) inp
文献类型：期刊论文
| 作者 | Li, HX; Wu, J; Wang, ZG; Daniels-Race, T |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1999-08-23 |
| 卷号 | 75期号:8页码:1173-1175 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, hx() |
| 英文摘要 | High-density inas nanowires embedded in an in0.52al0.48as matrix are fabricated in situ by molecular beam epitaxy on (100) inp. the average cross section of the nanowires is 4.5 x 10 nm(2). the linear density is as high as 70 wires/mu m. the spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. large polarization anisotropic effect is observed in polarized photoluminescence measurements. (c) 1999 american institute of physics. [s0003-6951(99)04134-0]. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; VAPOR-PHASE EPITAXY ; QUANTUM WIRES ; ISLANDS ; GAAS ; INP(001) ; MORPHOLOGY ; ARRAYS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000082037500048 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428718 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA |
| 推荐引用方式 GB/T 7714 | Li, HX,Wu, J,Wang, ZG,et al. High-density inas nanowires realized in situ on (100) inp[J]. Applied physics letters,1999,75(8):1173-1175. |
| APA | Li, HX,Wu, J,Wang, ZG,&Daniels-Race, T.(1999).High-density inas nanowires realized in situ on (100) inp.Applied physics letters,75(8),1173-1175. |
| MLA | Li, HX,et al."High-density inas nanowires realized in situ on (100) inp".Applied physics letters 75.8(1999):1173-1175. |
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来源：半导体研究所
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