Kinetics of wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy
文献类型：期刊论文
| 作者 | Zhang, JP; Hemment, PLF; Parker, EHC |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 1999-05-01 |
| 卷号 | 14期号:5页码:484-487 |
| ISSN号 | 0268-1242 |
| 通讯作者 | Zhang, jp() |
| 英文摘要 | The wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy layers has been investigated using rutherford backscattering spectrometry. in order to quantify the process, three sets of samples have been studied, namely thick films of si0.5ge0.5 alloy with and without a silicon capping layer and also bulk silicon. consistent with previous reports germanium in the alloy is rejected from the growing oxide and plies up in the underlying alloy during oxidation. the oxidation of the uncapped si0.5ge0.5 alloy has a higher oxidation rate than bulk silicon while the capped alloy layer oxidizes at the same rate as bulk silicon. this different behaviour between capped and uncapped samples during wet oxidation at 1000 degrees c is described in terms of a time-dependent two-stage processes, where the oxidation rate is controlled during stages and 2 by the availability of mobile silicon and oxygen atoms, respectively. |
| WOS关键词 | LAYERS ; OXYGEN ; SIGE ; DRY |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000080303700021 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428726 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JP |
| 作者单位 | 1.Shandong Normal Univ, Inst Semicond, Shandong 250014, Peoples R China 2.Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England 3.Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England |
| 推荐引用方式 GB/T 7714 | Zhang, JP,Hemment, PLF,Parker, EHC. Kinetics of wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy[J]. Semiconductor science and technology,1999,14(5):484-487. |
| APA | Zhang, JP,Hemment, PLF,&Parker, EHC.(1999).Kinetics of wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy.Semiconductor science and technology,14(5),484-487. |
| MLA | Zhang, JP,et al."Kinetics of wet oxidation at 1000 degrees c of si0.5ge0.5 relaxed alloy".Semiconductor science and technology 14.5(1999):484-487. |
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来源：半导体研究所
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