Tem study of dislocations in znte/gaas heterostructure grown by hot-wall epitaxy
文献类型：期刊论文
| 作者 | Han, PD |
| 刊名 | Defect and diffusion forum
 |
| 出版日期 | 1999 |
| 卷号 | 174页码:59-65 |
| 关键词 | Hrem Large-angle stereo-projection Misfit dislocations Stacking faults Tem |
| ISSN号 | 1012-0386 |
| 英文摘要 | A znte layer grown on gaas substrate by hot-wall epitaxy (hwe) was studied using transmission electron microscopy (tem). for a (110) cross-sectional specimen, its (001) znte/gaas interface was analysed by large angle stereo-projection (lasp) and high resolution electron microscopy (hrem). in the lasp, a double diffraction occurred and moire fringes were formed, meanwhile misfit dislocations were revealled clearly by weak beam technique. in hrem, not only lomer and 60 degrees types of misfit dislocations were observed, but also two types of stacking faults were analysed. the residual strain was estimated by both methods. |
| WOS关键词 | ELECTRON-MICROSCOPY ; LAYER ; SUPERLATTICES |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000082667600004 |
| 出版者 | TRANS TECH-SCITEC PUBLICATIONS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428729 |
| 专题 | 半导体研究所 |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, PD. Tem study of dislocations in znte/gaas heterostructure grown by hot-wall epitaxy[J]. Defect and diffusion forum,1999,174:59-65. |
| APA | Han, PD.(1999).Tem study of dislocations in znte/gaas heterostructure grown by hot-wall epitaxy.Defect and diffusion forum,174,59-65. |
| MLA | Han, PD."Tem study of dislocations in znte/gaas heterostructure grown by hot-wall epitaxy".Defect and diffusion forum 174(1999):59-65. |
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来源：半导体研究所
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