中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Self-assembled inas and in0.9al0.1as quantum dots on (001)inp substrates grown by molecular beam epitaxy (mbe)

文献类型:期刊论文

作者Sun, ZZ; Liu, FQ; Ding, D; Xu, B; Wang, ZG
刊名Journal of crystal growth
出版日期1999-07-01
卷号204期号:1-2页码:24-28
关键词Self-assembled quantum dots In0.9al0.1as/inalas/inp Molecular beam epitaxy
ISSN号0022-0248
通讯作者Sun, zz()
英文摘要Inas and in0.9al0.1as self-assembled quantum dots have been grown by stranski-krastanow growth mode on in0.52al0.48as lattice-matched on (0 0 1)inp substrates by mbe. the ternary in0.9al0.1as dots on inp was demonstrated for the first time. the structural and optical properties were characterized using tem and pl, respectively. experimental results show that, a larger critical thickness is required for in0.9al0.1as dots formation than for inas dots, the in0.9al0.1as dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both inas and in0.9al0.1as dots, and in0.9al0.1as dots give narrower luminescence than inas dots. (c) 1999 elsevier science b.v. all rights reserved.
WOS关键词RADIATIVE RECOMBINATION ; VISIBLE LUMINESCENCE ; ISLANDS ; PHOTOLUMINESCENCE ; INP ; ENSEMBLES ; INP(001) ; INGAAS ; GAAS
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000081342500004
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2428731
专题半导体研究所
通讯作者Sun, ZZ
作者单位Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Sun, ZZ,Liu, FQ,Ding, D,et al. Self-assembled inas and in0.9al0.1as quantum dots on (001)inp substrates grown by molecular beam epitaxy (mbe)[J]. Journal of crystal growth,1999,204(1-2):24-28.
APA Sun, ZZ,Liu, FQ,Ding, D,Xu, B,&Wang, ZG.(1999).Self-assembled inas and in0.9al0.1as quantum dots on (001)inp substrates grown by molecular beam epitaxy (mbe).Journal of crystal growth,204(1-2),24-28.
MLA Sun, ZZ,et al."Self-assembled inas and in0.9al0.1as quantum dots on (001)inp substrates grown by molecular beam epitaxy (mbe)".Journal of crystal growth 204.1-2(1999):24-28.

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来源:半导体研究所

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