Photoluminescence from hydrogenated amorphous silicon oxide thin films
文献类型：期刊论文
| 作者 | Zhu, M; Han, Y; Godet, C; Wehrspohn, RB |
| 刊名 | Journal of non-crystalline solids
 |
| 出版日期 | 1999-09-01 |
| 卷号 | 254页码:74-79 |
| ISSN号 | 0022-3093 |
| 通讯作者 | Zhu, m() |
| 英文摘要 | The photoluminescence (pl) properties of amorphous silicon oxide with different oxygen content prepared by dual-plasma chemical vapor deposition have been studied. the pl bands in the energy range of 1.7 to 3.2 ev were observed. the visible light emission from a-siox:h is sensitive to the oxygen content. the 3.2 and 2.58 ev pl bands are independent of x. the 2.58 ev pl band is attributed to interfacial defects states. the 3.2 ev pl band is attributed to the oxygen excess defects. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | VISIBLE PHOTOLUMINESCENCE ; BLUE PHOTOLUMINESCENCE ; SI ; NANOSTRUCTURES ; DEPOSITION |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000082513900010 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428732 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, M |
| 作者单位 | 1.Univ Sci & Technol China, Grad Sch, Dept Phys, Beijing 100039, Peoples R China 2.Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Ecole Polytech, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France 4.Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France |
| 推荐引用方式 GB/T 7714 | Zhu, M,Han, Y,Godet, C,et al. Photoluminescence from hydrogenated amorphous silicon oxide thin films[J]. Journal of non-crystalline solids,1999,254:74-79. |
| APA | Zhu, M,Han, Y,Godet, C,&Wehrspohn, RB.(1999).Photoluminescence from hydrogenated amorphous silicon oxide thin films.Journal of non-crystalline solids,254,74-79. |
| MLA | Zhu, M,et al."Photoluminescence from hydrogenated amorphous silicon oxide thin films".Journal of non-crystalline solids 254(1999):74-79. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。