Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Jiang, WH; Xu, HZ; Xu, B; Wu, J; Ye, XL; Liu, HY; Zhou, W; Sun, ZZ; Li, YF; Liang, JB |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-09-01 |
| 卷号 | 205期号:4页码:607-612 |
| 关键词 | Quantum dots Ingaas/ingaalas Adjusting layer Molecular beam epitaxy High index |
| ISSN号 | 0022-0248 |
| 通讯作者 | Jiang, wh() |
| 英文摘要 | In this paper, ingaas quantum dots with an adjusting ingaalas layer underneath are grown on (n 1 1)a/b (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. small and dense ingaas quantum dots are formed on (1 0 0) and (n 1 1)b substrates. a comparative study by atomic force microscopy shows that the alignment and uniformity for ingaas quantum dots are greatly improved on(5 1 1)b but deteriorated on (3 1 1)b surface, demonstrating the great influence of the buried ingaalas layer. there is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. quantum dots formed on (3 1 1)a and (5 1 1)a surfaces are large and random in distribution, and no emission from these dots can be detected. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000082692900020 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428733 |
| 专题 | 半导体研究所 |
| 通讯作者 | Jiang, WH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, WH,Xu, HZ,Xu, B,et al. Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy[J]. Journal of crystal growth,1999,205(4):607-612. |
| APA | Jiang, WH.,Xu, HZ.,Xu, B.,Wu, J.,Ye, XL.,...&Wang, ZG.(1999).Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy.Journal of crystal growth,205(4),607-612. |
| MLA | Jiang, WH,et al."Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy".Journal of crystal growth 205.4(1999):607-612. |
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来源：半导体研究所
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