Electrical properties of gan deposited on nitridated sapphire by molecular beam epitaxy using nh3 cracked on the growing surface
文献类型：期刊论文
| 作者 | Zhang, JP; Sun, DZ; Li, XB; Wang, XL; Kong, MY; Zeng, YP; Li, JM; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-05-01 |
| 卷号 | 201页码:429-432 |
| 关键词 | Gan Hydrogen contaminant Gsmbe Raman spectrum |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, jp() |
| 英文摘要 | We have found that gan epilayers grown by nh3-source molecular beam epitaxy (mbe) contain hydrogen. dependent on the hydrogen concentration, gan on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. furthermore, we notice that background electrons in gan increase with hydrogen incorporation. x-ray photoelectron spectroscopy (xps) measurements of the n1s region indicate that hydrogen is bound to nitrogen. so, the microdefect ga...h-n is an effective nitrogen vacancy in gan, and it may be a donor partly answering for the background electrons. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | STRESS ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000080406000089 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428763 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JP |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JP,Sun, DZ,Li, XB,et al. Electrical properties of gan deposited on nitridated sapphire by molecular beam epitaxy using nh3 cracked on the growing surface[J]. Journal of crystal growth,1999,201:429-432. |
| APA | Zhang, JP.,Sun, DZ.,Li, XB.,Wang, XL.,Kong, MY.,...&Lin, LY.(1999).Electrical properties of gan deposited on nitridated sapphire by molecular beam epitaxy using nh3 cracked on the growing surface.Journal of crystal growth,201,429-432. |
| MLA | Zhang, JP,et al."Electrical properties of gan deposited on nitridated sapphire by molecular beam epitaxy using nh3 cracked on the growing surface".Journal of crystal growth 201(1999):429-432. |
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来源：半导体研究所
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