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Exciton dynamics in self-organized inas/gaas quantum dots

文献类型:期刊论文

作者Lu, ZD; Li, Q; Xu, JZ; Zheng, BZ; Xu, ZY; Ge, WK
刊名Acta physica sinica
出版日期1999-04-01
卷号48期号:4页码:744-750
ISSN号1000-3290
通讯作者Lu, zd()
英文摘要Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized inas/gaas quantum dots (qds). it is found that the exciton lifetime in self-organized inas/gaas qds is around 1 ns, almost independent of inas layer thickness. the temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in qds. we have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the qds.
WOS关键词THERMAL-ACTIVATION ; LOCALIZED EXCITONS ; ENERGY RELAXATION ; TIME ; PHOTOLUMINESCENCE
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000082333000025
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2428764
专题半导体研究所
通讯作者Lu, ZD
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong
推荐引用方式
GB/T 7714
Lu, ZD,Li, Q,Xu, JZ,et al. Exciton dynamics in self-organized inas/gaas quantum dots[J]. Acta physica sinica,1999,48(4):744-750.
APA Lu, ZD,Li, Q,Xu, JZ,Zheng, BZ,Xu, ZY,&Ge, WK.(1999).Exciton dynamics in self-organized inas/gaas quantum dots.Acta physica sinica,48(4),744-750.
MLA Lu, ZD,et al."Exciton dynamics in self-organized inas/gaas quantum dots".Acta physica sinica 48.4(1999):744-750.

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来源:半导体研究所

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