Exciton dynamics in self-organized inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Lu, ZD; Li, Q; Xu, JZ; Zheng, BZ; Xu, ZY; Ge, WK |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 1999-04-01 |
| 卷号 | 48期号:4页码:744-750 |
| ISSN号 | 1000-3290 |
| 通讯作者 | Lu, zd() |
| 英文摘要 | Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized inas/gaas quantum dots (qds). it is found that the exciton lifetime in self-organized inas/gaas qds is around 1 ns, almost independent of inas layer thickness. the temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in qds. we have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the qds. |
| WOS关键词 | THERMAL-ACTIVATION ; LOCALIZED EXCITONS ; ENERGY RELAXATION ; TIME ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000082333000025 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428764 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, ZD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong |
| 推荐引用方式 GB/T 7714 | Lu, ZD,Li, Q,Xu, JZ,et al. Exciton dynamics in self-organized inas/gaas quantum dots[J]. Acta physica sinica,1999,48(4):744-750. |
| APA | Lu, ZD,Li, Q,Xu, JZ,Zheng, BZ,Xu, ZY,&Ge, WK.(1999).Exciton dynamics in self-organized inas/gaas quantum dots.Acta physica sinica,48(4),744-750. |
| MLA | Lu, ZD,et al."Exciton dynamics in self-organized inas/gaas quantum dots".Acta physica sinica 48.4(1999):744-750. |
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来源：半导体研究所
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