Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Xu, DP; Yang, H; Li, JB; Zhao, DG; Li, SF; Zhuang, SM; Wu, RH; Chen, Y; Li, GH |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2000-05-22 |
| 卷号 | 76期号:21页码:3025-3027 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Yang, h() |
| 英文摘要 | The optical properties of cubic gan films have been investigated in the temperature range of 10-300 k. five peaks were observed at 10 k. from the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 ev) to donor-acceptor pair (dap) transitions. furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 ev. the intensities of dap transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (c) 2000 american institute of physics. [s0003-6951(00)00921-9]. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000087066500017 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428782 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, H |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, DP,Yang, H,Li, JB,et al. Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition[J]. Applied physics letters,2000,76(21):3025-3027. |
| APA | Xu, DP.,Yang, H.,Li, JB.,Zhao, DG.,Li, SF.,...&Li, GH.(2000).Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition.Applied physics letters,76(21),3025-3027. |
| MLA | Xu, DP,et al."Optical characterization of high-purity cubic gan grown on gaas (001) substrate by metalorganic chemical vapor deposition".Applied physics letters 76.21(2000):3025-3027. |
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来源：半导体研究所
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