The influence of growth interruption on quantum dot laser
文献类型：期刊论文
| 作者 | Wang, H; Wang, HL; Wang, XD; Niu, ZC; Feng, SL |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2000-10-01 |
| 卷号 | 19期号:5页码:347-350 |
| 关键词 | Self-organized inas quantum dots Quantum dots laser Growth interruption Band-filling |
| ISSN号 | 1001-9014 |
| 通讯作者 | Wang, h() |
| 英文摘要 | Growth interruption was introduced during the growth of gaas capping layer of self-organized quantum dots. the comparison of two qd lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy. |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000090112400006 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428784 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, H |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, H,Wang, HL,Wang, XD,et al. The influence of growth interruption on quantum dot laser[J]. Journal of infrared and millimeter waves,2000,19(5):347-350. |
| APA | Wang, H,Wang, HL,Wang, XD,Niu, ZC,&Feng, SL.(2000).The influence of growth interruption on quantum dot laser.Journal of infrared and millimeter waves,19(5),347-350. |
| MLA | Wang, H,et al."The influence of growth interruption on quantum dot laser".Journal of infrared and millimeter waves 19.5(2000):347-350. |
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来源：半导体研究所
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