Dx-like centers in n-type al-doped zns1-xtex grown by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Lu, LW; Mak, KK; Ma, ZH; Wang, J; Sou, IK; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2000-07-01 |
| 卷号 | 216期号:1-4页码:141-146 |
| 关键词 | Dx-like centers Zns1-xtex Hmolecular-beam epitaxy |
| ISSN号 | 0022-0248 |
| 通讯作者 | Lu, lw() |
| 英文摘要 | Al-related dx-like centers were observed in n-type al-doped zns1-xtex epilayers grown by molecular-beam epitaxy on gaas substrates. the capacitance-voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of al donors in zns1-xtex were similar to the so-called dx centers in alxga1-xas. the optical ionization energies (e-i) and emission barriers (e-e) for the observed two al-related dx-like centers were determined as e-i similar to 1.0 and 2.0cv and e-e similar to 0.21 and 0.39 ev, respectively. it was also shown that the formation of al-related dx-like centers resulted in a significantly large lattice relaxation in zns1-xtex. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | ZNSTE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000088286000021 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428786 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, LW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semiconductors, Lab Semiconductor Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, LW,Mak, KK,Ma, ZH,et al. Dx-like centers in n-type al-doped zns1-xtex grown by molecular-beam epitaxy[J]. Journal of crystal growth,2000,216(1-4):141-146. |
| APA | Lu, LW,Mak, KK,Ma, ZH,Wang, J,Sou, IK,&Ge, WK.(2000).Dx-like centers in n-type al-doped zns1-xtex grown by molecular-beam epitaxy.Journal of crystal growth,216(1-4),141-146. |
| MLA | Lu, LW,et al."Dx-like centers in n-type al-doped zns1-xtex grown by molecular-beam epitaxy".Journal of crystal growth 216.1-4(2000):141-146. |
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来源：半导体研究所
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